Specifications T

J = 25ºC, unless otherwise noted

Parameter

Symbol

Test Conditions

Value

Unit

Min.

Typ.

Max.

Static Parameters

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250µA

60

--

--

V

Zero Gate Voltage Drain Current

IDSS

VDS = 60V, VGS = 0V, TJ = 25ºC

--

--

1

μA

Gate-Source Leakage

IGSS

VGS = ±20V

--

--

±100

nA

Gate-Source Threshold Voltage

VGS(th)

VDS = VGS, ID = 250µA

1.

0

2.

5

V

Drain-Source On-Resistance

RDS(on)

VGS = 10V, ID = 9A

--

14

m

Ω

VGS = 4.5V, ID = 9A

--

18

Forward Transconductance

gFS

VDS=5V,ID=9A

25

--

--

S

Dynamic Parameters

Input Capacitance

Ciss

VGS = 0V,

VDS = 30V,

f = 1.0MHz

--

2180

--

pF

Output Capacitance

Coss

--

350

--

Reverse Transfer Capacitance

Crss

--

270

--

Total Gate Charge

Qg

VDD = 30V,

ID = 9A,

VGS = 10V

--

47

--

nC

Gate-Source Charge

Qgs

--

6.7

--

Gate-Drain Charge

Qgd

--

12.5

--

Turn-on Delay Time

td(on)

VDD = 30V,

ID = 9A,

RG = 3Ω

--

8.5

--

ns

Turn-on Rise Time

tr

--

6

--

Turn-off Delay Time

td(off)

--

30

--

Turn-off Fall Time

tf

--

5

--

Drain-Source Body Diode Characteristics

Continuous Body Diode Current

IS

TC = 25ºC

--

--

9

A

Pulsed Diode Forward Current

ISM

--

--

36

Body Diode Voltage

VSD

TJ = 25ºC, ISD = 9A, VGS = 0V

--

--

1.2

V

Notes

1.

Repetitive Rating: Pulse width limited by maximum junction temperature

2.

Identical low side and high side switch with identical RG

www.bychip.cn

CEM6188

v2.0