Electrical Characteristics (TC=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

60

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=60V,VGS=0V

-

-

1

μA

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

1.0

3.0

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=20A

-

12

mΩ

VGS=4.5V, ID=20A

-

16

mΩ

Forward Transconductance

gFS

VDS=5V,ID=20A

18

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=30V,VGS=0V,

F=1.0MHz

-

1630

-

PF

Output Capacitance

Coss

-

113

-

PF

Reverse Transfer Capacitance

Crss

-

97

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=30V, RL=6.7Ω

VGS=5V,RG=3Ω

-

15

-

nS

Turn-on Rise Time

tr

-

20

-

nS

Turn-Off Delay Time

td(off)

-

120

-

nS

Turn-Off Fall Time

tf

-

15.6

-

nS

Turn-on Delay Time

td(on)

VDD=30V, RL=6.7Ω

VGS=10V,RG=3Ω

-

7.4

-

nS

Turn-on Rise Time

tr

-

5.1

-

nS

Turn-Off Delay Time

td(off)

-

28.2

-

nS

Turn-Off Fall Time

tf

-

5.5

-

nS

Total Gate Charge

Qg

VDS=30V,ID=20A,

VGS=10V

-

39

nC

Gate-Source Charge

Qgs

-

7

nC

Gate-Drain Charge

Qgd

-

8.5

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=20A

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

50

A

Reverse Recovery Time

trr

TJ = 25°C, IF =20A

di/dt = 100A/μs(Note3)

-

28

-

nS

Reverse Recovery Charge

Qrr

-

40

-

nC

Forward Turn-On Time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω

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