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GL195 Datasheet(PDF) 1 Page - GTM CORPORATION |
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GL195 Datasheet(HTML) 1 Page - GTM CORPORATION |
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1 / 2 page ![]() CORPORATION GL195 Page: 1/2 ISSUED DATE :2005/10/06 REVISED DATE : GL195 P N P S I L I C O N P L A N A R M E D I U M P O W E R T R A N S I S T O R Description The GL195 is designed for medium power amplifier applications. Features &-60 Volt VCEO &1 Amp continuous current &Complementary to GL194 Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13°TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0° 10° 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 : Storage Temperature Tstg -55~+150 : Collector to Base Voltage VCBO -80 V Collector to Emitter Voltage VCEO -60 V Emitter to Base Voltage VEBO -5 V Collector Current (DC) IC -1 A Collector Current (Pulse) IC -2 A Base Current IB -200 mA Total Power Dissipation PD 2 W Electrical Characteristics (Ta = 25 : , unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -80 - - V IC=-100uA , IE=0 *BVCEO -60 - - V IC=-10mA, IB=0 BVEBO -5 - - V IE=-100uA ,IC=0 ICBO - - -100 nA VCB=-60V, IE=0 ICES - - -100 nA VCES=-60V IEBO - - -100 nA VEB=-4V, IC=0 *VCE(sat)1 - - -0.3 V IC=-500mA, IB=-50mA *VCE(sat)2 - - -0.6 V IC=-1A, IB=-100mA *VBE(sat) - - -1.2 V IC=-1A, IB=-100mA *VBE(on) - - -1.0 V VCE=-5V, IC=-1A *hFE1 100 - VCE=-5V, IC=-1mA *hFE2 100 - 300 VCE=-5V, IC=-500mA *hFE3 80 - VCE=-5V, IC=-1A *hFE4 15 - VCE=-5V, IC=-2A fT 150 - - MHz VCE=-10V, IC=-50mA, f=100MHz Cob - - 10 pF VCB=-10V, IE=0, f=1MHz *Measured under pulse condition. Pulse width=300 s, Duty Cycle 2% SOT-223 |
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