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GL358 Datasheet(PDF) 1 Page - GTM CORPORATION |
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GL358 Datasheet(HTML) 1 Page - GTM CORPORATION |
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1 / 2 page ![]() CORPORATION GL358 Page: 1/2 ISSUED DATE :2005/12/28 REVISED DATE : GL358 N P N S I L I C O N P L A N A R H I G H C U R R E N T T R A N S I S T O R Description The GL358 is designed for general purpose switching and amplifier applications. Features &6 Amps continuous current, up to 10Amps peak current &Excellent gain characteristic specified up to 10Amps &Very low saturation voltages Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13°TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0° 10° 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO 200 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 6 V Collector Current (DC) IC 6 A Collector Current (Pulse) IC 10 A Total Power Dissipation PD 3 W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 : ,unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO 200 - - V IC=100uA , IE=0 *BVCEO 100 - - V IC=10mA, IB=0 BVEBO 6 - - V IE=100uA ,IC=0 ICBO - - 10 nA VCB=150V, IE=0 ICES - - 50 nA VCES=100V IEBO - - 10 nA VEB=6V, IC=0 *VCE(sat)1 - - 50 mV IC=100mA, IB=5mA *VCE(sat)2 - - 150 mV IC=2A, IB=100mA *VCE(sat)3 - - 340 mV IC=5A, IB=500mA *VBE(sat) - - 1.25 V IC=5A, IB=500mA *VBE(on) - - 1.10 V VCE=2V, IC=5A *hFE1 100 - - VCE=2V, IC=10mA *hFE2 100 200 300 VCE=2V, IC=2A *hFE3 50 - - VCE=2V, IC=4A *hFE4 20 - - VCE=2V, IC=10A fT - 130 - MHz VCE=10V, IC=100mA, f=50MHz Cob - 35 - pF VCB=10V, IE=0, f=1MHz SOT-223 |
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