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GL359 Datasheet(PDF) 1 Page - GTM CORPORATION |
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GL359 Datasheet(HTML) 1 Page - GTM CORPORATION |
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1 / 2 page ![]() CORPORATION GL359 Page: 1/2 ISSUED DATE :2005/10/27 REVISED DATE :2005/12/09B GL359 P N P S I L I C O N P L A N A R H I G H C U R R E N T T R A N S I S T O R Description The GL359 is designed for general purpose switching and amplifier applications. Features &5 Amps continuous current, up to 10Amps peak current &Excellent gain characteristic specified up to 10Amps &Very low saturation voltages Package Dimensions Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 6.70 7.30 B 13°TYP. C 2.90 3.10 J 2.30 REF. D 0.02 0.10 1 6.30 6.70 E 0° 10° 2 6.30 6.70 I 0.60 0.80 3 3.30 3.70 H 0.25 0.35 4 3.30 3.70 5 1.40 1.80 Absolute Maximum Ratings at Ta = 25 :::: Parameter Symbol Ratings Unit Junction Temperature Tj +150 Storage Temperature Tstg -55~+150 Collector to Base Voltage VCBO -140 V Collector to Emitter Voltage VCEO -100 V Emitter to Base Voltage VEBO -6 V Collector Current (DC) IC -5 A Collector Current (Pulse) IC -10 A Total Power Dissipation PD 3 W *The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum. Electrical Characteristics(Ta = 25 : ,unless otherwise stated) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -140 - - V IC=-100uA , IE=0 *BVCEO -100 - - V IC=-10mA, IB=0 BVEBO -6 - - V IE=-100uA ,IC=0 ICBO - - -50 nA VCB=-100V, IE=0 ICES - - -50 nA VCES=-100V IEBO - - -10 nA VEB=-6V, IC=0 *VCE(sat)1 - -20 -50 mV IC=-100mA, IB=-10mA *VCE(sat)2 - -90 -115 mV IC=-1A, IB=-100mA *VCE(sat)3 - -160 -220 mV IC=-2A, IB=-200mA *VCE(sat)4 - -300 -420 mV IC=-4A, IB=-400mA *VBE(sat) - -1.01 -1.17 V IC=-4A, IB=-400mA *VBE(on) - -0.925 -1.16 V VCE=-1V, IC=-4A *hFE1 100 200 VCE=-1V, IC=-10mA *hFE2 100 200 300 VCE=-1V, IC=-1A *hFE3 50 90 VCE=-1V, IC=-3A *hFE4 30 50 VCE=-1V, IC=-4A *hFE5 - 15 VCE=-1V, IC=-10A fT - 125 - MHz VCE=-10V, IC=-100mA, f=50MHz SOT-223 |
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