1/1

G

N

R

Description

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

140

V

Collector to Emitter Voltage

VCEO

80

V

Emitter to Base Voltage

VEBO

7

V

Collector Current

IC

1

A

Total Power Dissipation

PD

2

W

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

140

-

-

V

IC=100uA

BVCEO

80

-

-

V

IC=30mA

BVEBO

7

-

-

V

IE=100uA

ICBO

-

-

50

nA

VCB=90V

IEBO

-

-

50

nA

VEB=5V

VCE(sat)

-

-

0.2

V

IC=150mA, IB=15mA

VBE(sat)

-

-

1.1

V

IC=150mA, IB=15mA

hFE1

50

-

-

VCE=10V, IC=0.1mA

hFE2

90

-

-

VCE=10V, IC=10mA

hFE3

100

-

300

VCE=10V, IC=150mA

hFE4

50

-

-

VCE=10V, IC=500mA

hFE5

15

-

-

VCE=10V, IC=1000mA

fT

100

-

-

MHz

VCE=50mV, IC=50mA, f=100MHz

Cob

-

-

12

pF

VCE=10V, IE=0, f=1MHz

Important Notice:

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GTM semiconductor products are not warranted to be suitable for use in life-support Applications, or systems.

GTM assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

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