GL9435

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ISSUED DATE :2005/02/18

REVISED DATE :

G

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GL9435 provide the designer with the best combination of fast switching, low on-resistance and

cost-effectiveness.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

-30

V

Gate-Source Voltage

f 25

V

-6.0

A

-4.8

A

-20

A

Total Power Dissipation

2.7

W

Linear Derating Factor

0.02

W/

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-amb

45

/W

-30V

50m

-6A

Pb Free Plating Product

SOT-223