GL9960

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ISSUED DATE :2006/10/11

REVISED DATE :

G

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GL9960 provide the designer with the best combination of fast switching, ruggedized device design, ultra

low on-resistance and cost-effectiveness.

Features

*Low On-Resistance

*Fast Switching Speed

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13°TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0°

10°

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

40

V

Gate-Source Voltage

±20

V

7.8

A

6.2

A

20

A

Total Power Dissipation

2.7

W

Linear Derating Factor

0.02

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-amb

45

/

: W

40V

20m

7.8A

Pb Free Plating Product

SOT-223