GLA94 datasheet(1/2 Pages) GTM

Part #	GLA94

Description	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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GMA94

1/2

ISSUED DATE :2005/03/25

REVISED DATE :

G

G L

L A

A9944

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A LL P

P LL A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GLA94 is designed for application requires high voltage.

Features

&High voltage: VCEO=400V (min) at IC=1mA

&High current gain: IC=300mA at 25

&Complementary with GLA44

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

6.70

7.30

B

13 C

TYP.

C

2.90

3.10

J

2.30 REF.

D

0.02

0.10

1

6.30

6.70

E

0 C

10 C

2

6.30

6.70

I

0.60

0.80

3

3.30

3.70

H

0.25

0.35

4

3.30

3.70

5

1.40

1.80

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature Range

TsTG

-55 ~ +150

Collector to Base Voltage

VCBO

-400

V

Collector to Emitter Voltage

VCEO

-400

V

Emitter to Base Voltage

VEBO

-6

V

Collect Current(DC)

IC

-500

mA

Total Power Dissipation

PD

2

W

Electrical Characteristics(Ta = 25 : )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-400

-

V

IC=-100Ua, IE=0

BVCEO

-400

-

V

IC=-1mA, IB=0

BVEBO

-6

-

V

IE=-100uA, IC=0

ICBO

-

-100

nA

VCB=-400V, IE=0

ICES

-

-500

nA

VCE=-400V, VBE=0

IEBO

-

-100

nA

VEB=-6V, IC=0

*VCE(sat)1

-

-350

mV

IC=-1mA, IB=-0.1mA

*VCE(sat)2

-

-500

mV

IC=-10mA, IB=-1mA

*VCE(sat)3

-

-750

mV

IC=-50mA, IB=-5mA

*VBE(sat)

-

-750

mV

IC=-10mA, IB=-1mA

*hFE1

40

-

VCE=-10V, IC=-1mA

*hFE2

50

-

300

VCE=-10V, IC=-10mA

*hFE3

45

-

VCE=-10V, IC=-50mA

*hFE4

40

-

VCE=-10V, IC=-100mA

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

SOT-223

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