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NCE40P07S Datasheet(PDF) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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NCE40P07S Datasheet(HTML) 1 Page - BYCHIP ELECTRONICS CO., LIMITED |
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1 / 5 page  P-channel Enhancement Mode Power MOSFET Features VDS= -30V, ID= -9A RDS(ON) < 16 mΩ @ VGS = -10V RDS(ON) < 23 mΩ @ VGS = -4.5V ● Advanced Trench Technology ● Provide Excellent RDS(ON) and Low Gate Charge ● Lead Free and Green Available 100% UIS TESTED! 100% ΔVds TESTED! General Features Absolute Maximum Ratings T C = 25º C, unless otherwise noted Parameter Symbol Value Unit Drain-Source Voltage V DS -30 V Continuous Drain Current I D -9 A Pulsed Drain Current (note1) I DM -36 A Gate-Source Voltage V GS ±20 V Power Dissipation P D 2.7 W Single Pulse Avalanche Energy (note3) EAS 231 mJ Operating Junction and Storage Temperature Range T J, Tstg -55 To 150 ºC Thermal Resistance Parameter Symbol Value Unit Thermal Resistance, Junction-to-Ambient R thJA 47 ºC/W www.bychip.cn SOP-8 Schematic diagram pin assignment NCE40P07S v1.0 |
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