GP4565

Page: 1/7

ISSUED DATE :2006/05/12

REVISED DATE :

G

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description

The GP4565 provide the designer with the best combination of fast switching, ruggedized device design, low

on-resistance and cost-effectiveness.

Features

*Simple Drive Requirement

*Lower On-resistance

*Fast Switching Performance

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

-

0.5334

c1

0.203

0.279

A1

0.381

-

D

9.017

10.16

A2

2.921

4.953

E

6.096

7.112

b

0.356

0.559

E1

7.620

8.255

b1

0.356

0.508

e

2.540 BSC

b2

1.143

1.778

HE

-

10.92

b3

0.762

1.143

L

2.921

3.810

c

0.203

0.356

Absolute Maximum Ratings

Ratings

Parameter

Symbol

N-channel P-channel

Unit

Drain-Source Voltage

40

-40

V

Gate-Source Voltage

±20

±20

V

7.6

-6.5

A

6

-5.2

A

30

-30

A

Total Power Dissipation

2.0

W

Linear Derating Factor

0.016

W/ :

Operating Junction and Storage Temperature Range

Tj, Tstg

-55 ~ +150

:

Thermal Data

Parameter

Symbol

Value

Unit

Max.

Rthj-a

62.5

/

: W

Pb Free Plating Product

40V

7.6A

-40V

-6.5A

SEATING PLANE

e

b

Z

Z

D

SECTION Z - Z

b

GAUGE PLANE

DIP-8