GSB772SS datasheet(1/3 Pages) GTM

Part #	GSB772SS

Description	PNP EPITAXIAL PLANAR TRANSISTOR

PDF	3 Pages

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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GSB772SS

Page: 1/3

ISSUED DATE :2005/11/07

REVISED DATE :

G

G S

S B

B 777722S

S S

S

P

P N

N P

P E

E P

P II T

T A

A X

X II A

A LL P

P LL A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSB772SS is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter

and voltage regulator.

Features

&High current output up to -3A

&Low saturation voltage

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

1.90 REF.

B

2.40

2.80

H

1.00

1.30

C

1.40

1.60

K

0.10

0.20

D

0.35

0.50

J

0.40

-

E

0

0.10

L

0.85

1.15

F

0.45

0.55

M

0°

10°

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature Range

TsTG

-55 ~ +150

Collector to Base Voltage

VCBO

-40

V

Collector to Emitter Voltage

VCEO

-30

V

Emitter to Base Voltage

VEBO

-5

V

Collect Current(DC)

IC

-3

A

Total Power Dissipation

PD

750

mW

Electrical Characteristics(Ta = 25 : )

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

-

V

IC=-100uA, IE=0

BVCEO

-30

-

V

IC=-1mA, IB=0

BVEBO

-5

-

V

IE=-10uA, IC=0

ICBO

-

-1

uA

VCB=-30V, IE=0

IEBO

-

-1

uA

VEB=-3V, IC=0

*VCE(sat)

-

-0.5

V

IC=-2A, IB=-200mA

*VBE(sat)

-

-1.0

-2.0

V

IC=-2A, IB=-200mA

*hFE1

30

-

VCE=-2V, IC=-20mA

*hFE2

100

-

500

VCE=-2V, IC=-1A

fT

-

80

-

MHz

VCE=-5V, IC=-100mA, f=100MHz

Cob

-

55

-

pF

VCB=-10V, f=1MHz

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE2

Rank

Q

P

E

Range

100 - 200

160 - 320

200 - 500

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