CORPORATION

GSBAS16

Page: 1/2

ISSUED DATE :2006/12/12

REVISED DATE :

G

S

E

V O L T A G E 8 5 V, C U R R E N T 2 5 0 m A

Description

The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.

The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount

package.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

:

Storage Temperature

Tstg

-65 ~ +150

:

Reverse Voltage

85

V

Repetitive Reverse Voltage

85

V

Forward Current

250

mA

Repetitive Forward Current

500

mA

Forward Surge Current (1ms)

1000

mA

Total Power Dissipation

225

mW

Characteristic

Symbol

Min.

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

85

-

V

-

715

mV

-

855

mV

-

1000

mV

Forward Voltage

-

1250

mV

Reverse Current

-

1

uA

Total Capacitance

2

pF

Reverse Recovery Time

Trr

-

6

nS