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ISSUED DATE :2005/01/05

REVISED DATE :

G

S

S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E

V O L T A G E 3 0 V, C U R R E N T 2 0 0 m A

Description

These schottky barrier diodes are designed for high speed switching applications circuit protection, and voltage clamping.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BCS.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

-55 ~ +125

Storage Temperature

Tstg

-55 ~ +150

Peak Repetitive Reverse Voltage

30

V

Forward Continuous Current

200

mA

Peak Repetitive Forward Current

300

mA

Surge Forward Current(t 1.0s)

600

mA

Total Power Dissipation at Ta = 25 :

PD

225

mW

Characteristics at Ta = 25 ::::

characteristics

Symbol

Min

Max.

Unit

Test Conditions

Reverse Breakdown Voltage

30

-

V

IR=10 A

-

240

mV

IF=0.1mA

-

320

mV

IF=1mA

-

400

mV

IF=10mA

-

500

mV

IF=30mA

Forward Voltage

-

1000

mV

IF=100mA

Reverse Leakage Current

-

2.0

A

VR=25V

Total Capacitance

-

10

pF

VR=1V, f=1MHz

Reverse Recover Time

Trr

-

5

ns

IF=IR=10mA, IR(Rec)=1mA