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ISSUED DATE :2005/06/08

REVISED DATE :

G

N

R

Description

The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Collector to Base Voltage

VCBO

50

V

Collector to Emitter Voltage

VCEO

45

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

IC

800

mA

Total Power Dissipation

PD

225

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

50

-

-

V

IC=100uA

BVCEO

45

-

-

V

IC=10mA

BVCES

50

-

-

V

IC=100uA

BVEBO

5

-

-

V

IE=100uA

ICES

-

-

100

nA

VCE=25V

IEBO

-

-

100

nA

VEB=4V

*VCE(sat)

-

-

700

mV

IC=500mA, IB=50mA

*VBE(on)

-

-

1.2

V

VCE=1V, IC=300mA

100

-

630

VCE=1V, IC=100mA

fT

-

100

-

MHz

VCE=5V, IC=10mA, f=100MHz

Cob

-

-

12

pF

VCB=10V, f=1MHz, IE=0A

* Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Rank

8FA

8FB

8FC

Range

100 - 250

160 - 400

250 - 630