GSC945 datasheet(1/2 Pages) GTM

Part #	GSC945

Description	NPN EPITAXIAL SILICON TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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ISSUED DATE :2005/06/14

REVISED DATE :

G

G S

S C

C 994455

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSC945 is an audio frequency amplifier high frequency OSC NPN transistor.

Features

&Collector-Emitter Voltage BVCBO=50V

&

Collector current up to 150mA

&

High hFE linearity

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.45

4.7

D

4.44

4.7

S1

1.02

-

E

3.30

3.81

b

0.36

0.51

L

12.70

-

b1

0.36

0.76

e1

1.150

1.390

C

0.36

0.51

e

2.42

2.66

Absolute Maximum Ratings (TA=25 )

::::

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

5

V

Collector Current

IC

150

mA

Base Current

IB

50

mA

Total Device Dissipation

PD

250

mW

Junction Temperature

TJ

125

:

Storage Temperature

Tstg

-55 ~ +150

:

Electrical Characteristics (TA = 25 : unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

V

IC=100uA, IE=0

BVCEO

50

-

V

IC=1mA, IB=0

BVEBO

5

-

V

IE=1uA, IC=0

ICBO

-

100

nA

VCB=40V

IEBO

-

100

nA

VEB=3V

VCE(sat)

-

0.1

0.3

V

IC=100mA, IB=10mA

hFE

90

-

600

VCE=6V, IC=1mA

fT

100

190

-

MHz

VCE=10V, IC=50mA

Cob

-

2.0

3.0

pF

VCB=10V, IE=0, f=1MHz

NF

-

4.0

6.0

dB

IC=0.1mA , VCE=6V, RG=10k Ł , f=100HZ

Classification Of hFE

Rank

R

Q

P

K

Range

90 ~ 180

135 ~ 270

200 ~ 400

300 ~ 600

e 1

b

e

S E A T IN G

P L A N E

b 1

D

C

S 1

E

TO-92

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