GSC4413

Page: 2/4

ISSUED DATE :2006/02/24

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.01

-

V/ :

Gate Threshold Voltage

-0.5

-

-1.5

V

Forward Transconductance

-

16

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-25

uA

-

-

30

-

-

40

-

-

65

m

-

17

27

Gate-Source Charge

-

4

-

Gate-Drain (“Miller”) Change

-

7

-

nC

-

12

-

Rise Time

-

11

-

Turn-off Delay Time

-

40

-

Fall Time

-

13

-

ns

Input Capacitance

-

1140

1820

Output Capacitance

-

250

-

Reverse Transfer Capacitance

-

210

-

pF

f=1.0MHz

Gate Resistance

-

4.3

-

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

-

28

-

ns

Reverse Recovery Charge

-

22

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

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