GSC4435

Page: 2/5

ISSUED DATE :2005/03/02

REVISED DATE :2005/09/30B

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-30

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.037

-

V/ :

Gate Threshold Voltage

-1.0

-

-3.0

V

Forward Transconductance

-

20

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-5

uA

-

-

20

Static Drain-Source On-Resistance

-

-

35

m Ł

-

47

-

Gate-Source Charge

-

9.5

-

Gate-Drain (“Miller”) Change

-

8

-

nC

-

-

30

Rise Time

-

-

20

Turn-off Delay Time

-

-

120

Fall Time

-

-

80

ns

Input Capacitance

-

-

2800

Output Capacitance

-

-

1400

Reverse Transfer Capacitance

-

-

350

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-0.75

-1.2

V

-

-

-2.1

A

1

-

-

-50

A

Notes: 1. Pulse width limited by safe operating area.

2. Pulse width 300us, duty cycle 2%.