GSC4672 datasheet(1/2 Pages) GTM

Part #	GSC4672

Description	NPN EPITAXIAL SILICON TRANSISTOR

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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ISSUED DATE :2005/07/15

REVISED DATE :

G

G S

S C

C 44776622

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L S

S II L

L II C

C O

O N

N T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSC4672 is designed for low frequency amplifier applications.

Features

&Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=1A/50mA

&

Excellent DC current gain characteristics

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.45

4.7

D

4.44

4.7

S1

1.02

-

E

3.30

3.81

b

0.36

0.51

L

12.70

-

b1

0.36

0.76

e1

1.150

1.390

C

0.36

0.51

e

2.42

2.66

Absolute Maximum Ratings (TA=25 )

::::

Parameter

Symbol

Ratings

Unit

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

6

V

Collector Current (DC)

IC

2

A

Collector Current (Pulse PW=10ms)

IC

5

A

Total Device Dissipation

PD

750

mW

Junction Temperature

TJ

150

:

Storage Temperature

Tstg

-55 ~ +150

:

Electrical Characteristics (TA = 25 : unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

V

IC=50uA, IE=0

BVCEO

50

-

V

IC=1mA, IB=0

BVEBO

6

-

V

IE=50uA, IC=0

ICBO

-

100

nA

VCB=60V, IE=0

IEBO

-

100

nA

VEB=5V, IC=0

*VCE(sat)

-

0.1

0.35

V

IC=1A, IB=50mA

*hFE

120

-

400

VCE=2V, IC=500mA

fT

-

210

-

MHz

VCE=2V, IE=500mA, f=100MHz

Cob

-

25

-

pF

VCB=10V, IE=0, f=1MHz

*Pulse Test: Pulse Width 380 s, Duty Cycle 2%

Classification Of hFE

Rank

A

B

Range

120 ~ 240

200 ~ 400

e 1

b

e

S E A T IN G

P L A N E

b 1

D

C

S 1

E

TO-92

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