GSD965 datasheet(1/2 Pages) GTM

Part #	GSD965

Description	NPN EPITAXIAL PLANAR TRANSISTOR

PDF	2 Pages

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Manufacturer	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

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CORPORATION

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ISSUED DATE :2004/04/05

REVISED DATE :2004/11/29B

G

G S

S D

D 996655

N

N P

P N

N E

E P

P II T

T A

A X

X II A

A L

L P

P L

L A

A N

N A

A R

R T

T R

R A

A N

N S

S II S

S T

T O

O R

R

Description

The GSD965 is designed for use as AF output amplifier and flash unit

Package Dimensions

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

4.45

4.7

D

4.44

4.7

S1

1.02

-

E

3.30

3.81

b

0.36

0.51

L

12.70

-

b1

0.36

0.76

e1

1.150

1.390

C

0.36

0.51

e

2.42

2.66

Absolute Maximum Ratings at Ta = 25

Collector to Base Voltage

BVCBO

40

V

Collector to Emitter Voltage

BVCEO

20

V

Emitter to Base Voltage

BVEBO

7.0

V

Collector Current (Continuous)

IC

5

A

Collector Current (Peak PT=10mS)

IC

8

A

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-55 ~ +150

Total Power Dissipation at Ta = 25 :

PD

0.75

W

Characteristics at Ta = 25

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

40

-

V

IC=100uA

BVCEO

20

-

V

IC=1mA

BVEBO

7

-

V

IE=10uA

ICBO

-

0.1

uA

VCB=60V

IEBO

-

0.1

uA

VEB=7V

*VCE(sat)

-

0.35

1

V

IC=3A, IB=0.1A

*hFE1

230

-

800

VCE=2V, IC=0.5A

*hFE2

150

-

VCE=2V, IC=2A

fT

-

150

-

MHz

VCE=6V, IE=50mA

Cob

-

50

pF

VCB=20V, f=1MHz

* Pulse Test: Pulse Width 380us, Duty Cycle 2%

Classification Of hFE1

Rank

Q

R

S

Range

230-380

340-600

560-800

e1

b

e

SEATING

PLANE

b1

D

C

S1

E

TO-92

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