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ISSUED DATE :2005/06/08

REVISED DATE :

G

N

R

Description

The GSMBT3904 is designed for general purpose switching and amplifier applications.

Package Dimensions

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

0.80

1.10

L1

0.42 REF.

A1

0

0.10

L

0.15

0.35

A2

0.80

1.00

b

0.25

0.40

D

1.80

2.20

c

0.10

0.25

E

1.15

1.35

e

0.65 REF.

HE

1.80

2.40

Q1

0.15 BSC.

Absolute Maximum Ratings at Ta = 25 ::::

Parameter

Symbol

Ratings

Unit

Junction Temperature

Tj

+150

Storage Temperature

Tstg

-65 ~ +150

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

40

V

Emitter to Base Voltage

VEBO

6

V

Collector Current

IC

200

mA

Total Power Dissipation

PD

350

mW

Characteristics at Ta = 25 ::::

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

60

-

-

V

IC=10uA , IE=0

BVCEO

40

-

-

V

IC=1mA ,IB=0

BVEBO

6

-

-

V

IE=10uA,IC=0

ICES

-

-

50

nA

VCB=30V

IEBO

-

-

50

nA

VEB=3V

VCE(sat)1

-

-

200

mV

IC=10mA, IB=1mA

VCE(sat)2

-

-

300

mV

IC=50mA, IB=5mA

VBE(sat)1

650

-

850

mV

IC=10mA, IB=1mA

VBE(sat)2

-

-

950

mV

IC=50mA, IB=5mA

40

-

-

VCE=1V, IC=0.1mA

70

-

-

VCE=1V, IC=1mA

100

-

300

VCE=1V, IC=10mA

60

-

-

VCE=1V, IC=50mA

30

-

-

VCE=1V, IC=100mA

fT

300

-

-

MHz

VCE=20V, IE=-10mA, f=100MHz

Cob

-

-

4

pF

VCB=10V, f=100KHz

Cib

-

-

8

pF

VEB=0.5V, f=100KHz

td

-

-

35

ns

VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA

tr

-

-

35

ns

VCC=3V, VBE(OFF)=0.5V, IC=10mA, IB1=1mA

tstg

-

-

200

ns

VCC=3V, IC=10mA, IB1=-IB2=1mA

tf

-

-

50

ns

VCC=3V, IC=10mA, IB1=-IB2=1mA