RKD751KP datasheet(2/5 Pages) RENESAS

Part #	RKD751KP

Description	Silicon Schottky Barrier Diode for Detector

PDF	5 Pages

Scroll/Zoom	100%

Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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2 / 5 page

RKD751KP

Rev.2.00 Feb 22, 2007 page 2 of 4

Absolute Maximum Ratings

(Ta = 25

°C)

Item

Symbol

Value

Unit

Repetitive peak reverse voltage

VRRM

Reverse voltage

Average rectified current

Junction temperature

125

°C

Storage temperature

Tstg

−55 to +125

°C

Electrical Characteristics

(Ta = 25

°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Reverse voltage

3.0



IR = 1 mA

Reverse current



µA

VR = 0.5 V

Forward current



VF = 0.5 V

Capacitance



1.0

VR = 0.5 V, f = 1 MHz

ESD-Capability *



C = 200 pF, RL = 0 Ω, Both forward

and reverse direction 1 pulse.

Notes

: 1. Failure criterion ; I

R > 100 µA at VR = 0.5 V

2. Please do not use the soldering iron due to avoid high stress to the MP6 package.

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