GSS4502 datasheet(3/9 Pages) GTM

3 / 9 page

GSS4502

Page: 3/9

ISSUED DATE :2005/08/24

REVISED DATE :2005/09/29B

P-Channel Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

BVDSS

-20

VGS=0, ID=-250uA

Breakdown Voltage Temperature Coefficient

BVDSS /

-0.037

V/ :

Reference to 25 : , ID=-1mA

Gate Threshold Voltage

VGS(th)

-0.5

VDS=VGS, ID=-250uA

Forward Transconductance

gfs

VDS=-10V, ID=-5A

Gate-Source Leakage Current

IGSS

D100

VGS= D12V

Drain-Source Leakage Current(Tj=25 : )

-1

VDS=-20V, VGS=0

Drain-Source Leakage Current(Tj=70 : )

IDSS

-25

VDS=-16V, VGS=0

VGS=-10V, ID=-6A

VGS=-4.5V, ID=-5A

Static Drain-Source On-Resistance2

RDS(ON)

m Ł

VGS=-2.5V, ID=-4A

Total Gate Charge2

15.4

Gate-Source Charge

Qgs

2.8

Gate-Drain (“Miller”) Change

Qgd

2.1

ID=-5A

VDS=-10V

VGS=-5V

Turn-on Delay Time2

Td(on)

Rise Time

Turn-off Delay Time

Td(off)

Fall Time

VDS=-10V

ID=-1A

VGS=-4.5V

RG=6 Ł

RD=4.5 Ł

Input Capacitance

Ciss

940

Output Capacitance

Coss

440

Reverse Transfer Capacitance

Crss

130

VGS=0V

VDS=-15V

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Forward On Voltage2

VSD

-1.2

IS=-1.8A, VGS=0V, Tj=25 :

Continuous Source Current (Body Diode)

-1.67

VD=VG=0V, VS=-1.2V

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

3. Surface mounted on 1 in2 copper pad of FR4 board; 135 : /W when mounted on Min. copper pad.

GSS4502 Datasheet(PDF) 3 Page - GTM CORPORATION

GSS4502 Datasheet(HTML) 3 Page - GTM CORPORATION

Html Pages

1 2 3 4 5 6 7 8 9

Datasheet Download

Link URL