GSS4511

Page: 2/7

ISSUED DATE :2005/08/29

REVISED DATE :2005/09/29B

N-Channel Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

35

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.02

-

V/ :

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

9

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

25

uA

-

18

25

-

29

37

m Ł

-

11

18

Gate-Source Charge

-

3

-

Gate-Drain (“Miller”) Change

-

6

-

nC

-

12

-

Rise Time

-

7

-

Turn-off Delay Time

-

22

-

Fall Time

-

6

-

ns

Input Capacitance

-

830

1330

Output Capacitance

-

150

-

Reverse Transfer Capacitance

-

110

-

pF

f=1.0MHz

Gate Resistance

-

1.2

1.8

Ł

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

18

-

ns

Reverse Recovery Charge

-

12

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.