GSS4913

Page: 2/4

ISSUED DATE :2006/08/31

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.028

-

V/ :

Reference to 25 :

Gate Threshold Voltage

-0.4

-

-1.0

V

Forward Transconductance

-

6.5

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 : )

-

-

-25

uA

-

-

130

Static Drain-Source On-Resistance

-

-

-

-

180

m

-

6

8.5

Gate-Source Charge

-

0.8

-

Gate-Drain (“Miller”) Change

-

1.3

-

nC

-

6.5

-

Rise Time

-

20

-

Turn-off Delay Time

-

31

-

Fall Time

-

21

-

ns

Input Capacitance

-

405

-

Output Capacitance

-

170

-

Reverse Transfer Capacitance

-

45

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

-

-

-2.1

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.