GSS4920

Page: 2/5

ISSUED DATE :2005/11/03

REVISED DATE :

Electrical Characteristics (Tj = 25 :::: unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

25

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.037

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

1.0

-

3.0

V

Forward Transconductance

-

14

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

25

uA

-

-

25

-

-

35

m

-

10.5

-

Gate-Source Charge

-

1.9

-

Gate-Drain (“Miller”) Change

-

7.5

-

nC

-

8

-

Rise Time

-

9.5

-

Turn-off Delay Time

-

25

-

Fall Time

-

13.5

-

ns

Input Capacitance

-

395

-

Output Capacitance

-

260

-

Reverse Transfer Capacitance

-

105

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

-

1.67

A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

: