GSS4955

Page: 2/4

ISSUED DATE :2005/09/30

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

-20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

-0.01

-

V/ :

Reference to 25 , I

:

Gate Threshold Voltage

-0.5

-

-1.2

V

Forward Transconductance

-

9

-

S

Gate-Source Leakage Current

-

-

±100

nA

Drain-Source Leakage Current(Tj=25 )

:

-

-

-1

uA

Drain-Source Leakage Current(Tj=70 )

:

-

-

-25

uA

-

-

45

-

-

65

m

-

19

30

Gate-Source Charge

-

3

-

Gate-Drain (“Miller”) Change

-

6

-

nC

-

9

-

Rise Time

-

10

-

Turn-off Delay Time

-

52

-

Fall Time

-

24

-

ns

Input Capacitance

-

1400

2240

Output Capacitance

-

270

-

Reverse Transfer Capacitance

-

230

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

-1.2

V

-

32

-

ns

Reverse Recovery Charge

-

22

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.

: