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LEAQ7WR Datasheet(PDF) 5 Page - OSRAM GmbH |
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LEAQ7WR Datasheet(HTML) 5 Page - OSRAM GmbH |
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5 / 25 page ![]() LE A Q7WR DATASHEET DATASHEET 5 | Version 1.0 | 2023-10-27 Characteristics I F = 1400 mA; TS = 25 °C; per chip Parameter Symbol Values Peak Wavelength λ peak typ. 624 nm Dominant Wavelength 3) λ dom min. typ. max. 612 nm 617 nm 624 nm Spectral bandwidth at 50% I rel,max ∆λ typ. 18 nm Viewing angle at 50% I V 2φ typ. 120 ° Radiating surface A color typ. 1.23 x 3.16 mm2 Partial Flux acc. CIE 127:2007 4) I F = 1400 mA Φ E/V, 120° typ. 0.82 Forward Voltage 5) I F = 1400 mA V F min. typ. max. 2.00 V 2.20 V 2.90 V Reverse voltage (ESD device) V R ESD min. 45 V Reverse voltage 2) I R = 20 mA V R max. 1.2 V Real thermal resistance junction/solderpoint 6) R thJS real typ. max. 1.00 K / W 1.30 K / W Electrical thermal resistance junction/solderpoint 6) with efficiency η e = 29 % R thJS elec. typ. max. 0.71 K / W 0.92 K / W |
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