2/4

ISSUED DATE :2005/05/06

REVISED DATE :

Electrical Characteristics(Tj = 25

Unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Drain-Source Breakdown Voltage

20

-

-

V

Breakdown Voltage Temperature Coefficient

Tj

-

0.1

-

V/ :

Gate Threshold Voltage

0.5

-

-

V

Forward Transconductance

-

13

-

S

Gate-Source Leakage Current

-

-

D100

nA

Drain-Source Leakage Current(Tj=25 : )

-

-

1

uA

Drain-Source Leakage Current(Tj=55 : )

-

-

10

uA

-

-

30

-

-

34

-

-

50

-

-

90

m Ł

-

8.7

16

Gate-Source Charge

-

1.5

-

Gate-Drain (“Miller”) Change

-

3.6

-

nC

-

6

-

Rise Time

-

14

-

Turn-off Delay Time

-

18.4

-

Fall Time

-

2.8

-

ns

Input Capacitance

-

603

1085

Output Capacitance

-

144

-

Reverse Transfer Capacitance

-

111

-

pF

f=1.0MHz

Source-Drain Diode

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

-

-

1.2

V

-

16.8

-

ns

Reverse Recovery Charge

-

11

-

nC

dI/dt=100A/ s

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width 300us, duty cycle 2%.