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MP4025 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # MP4025
Description  Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1)
PDF  2 Pages
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

MP4025 Datasheet(HTML) 2 Page - Toshiba Semiconductor

  MP4025 Datasheet HTML 1Page - Toshiba Semiconductor MP4025 Datasheet HTML 2Page - Toshiba Semiconductor  
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MP4025
2000-08-21
2/2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance of junction to ambient (4 devices operation, Ta
= 25°C)
SRth (j-a)
31.3
°C/W
Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s)
TL
260
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 45 V, IE = 0
¾
¾
10
mA
Collector cut-off current
ICEO
VCE = 45 V, IB = 0
¾
¾
10
mA
Emitter cut-off current
IEBO
VEB = 6 V, IC = 0
0.46
¾
1.25
mA
Collector-emitter breakdown voltage
V (BR) CEO
IC = 10 mA, IB = 0
50
60
70
V
Resistance
RB
¾
2.5
3.6
4.7
k
W
DC current gain
hFE
VCE = 2 V, IC = 0.7 A
2000
¾
¾
¾
VCE (sat) (1)
IC = 0.5 A, VBH = 4.2 V
¾
¾
1.2
Collector-emitter saturation voltage
VCE (sat) (2)
IC = 0.7 A, VBH = 9 V
¾
¾
1.5
V
Input voltage (low)
VBL
VCE = 30 V, IC = 100 mA
¾
¾
0.7
V
Turn-on time
ton
¾
0.3
¾
Storage time
tstg
¾
4.0
¾
Switching time
Fall time
tf
¾
0.6
¾
ms
Input
VCC ~
- 24 V
Duty cycle <
= 1%
0
20
ms
VBH = 5 V
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
· The information contained herein is subject to change without notice.
000707EAA2



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