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RJK4012DPE Datasheet(PDF) 2 Page - Renesas Technology Corp

Part # RJK4012DPE
Description  Silicon N Channel MOS FET High Speed Power Switching
PDF  4 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RJK4012DPE Datasheet(HTML) 2 Page - Renesas Technology Corp

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RJK4012DPE
REJ03G1575-0100 Rev.1.00 Aug 08, 2007
Page 2 of 3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage
V(BR)DSS
400
—
—
V
ID = 10 mA, VGS = 0
Zero gate voltage drain current
IDSS
—
—
1
µA
VDS = 400 V, VGS = 0
Gate to source leak current
IGSS
—
—
±0.1
µA
VGS =
±30 V, VDS = 0
Gate to source cutoff voltage
VGS(off)
3.0
—
4.5
V
VDS = 10 V, ID = 1 mA
Static drain to source on state
resistance
RDS(on)
—
0.34
0.41
Ω
ID = 7.5 A, VGS = 10 V
Note4
Input capacitance
Ciss
—
1100
—
pF
Output capacitance
Coss
—
135
—
pF
Reverse transfer capacitance
Crss
—
17
—
pF
VDS = 25 V
VGS = 0
f = 1 MHz
Turn-on delay time
td(on)
—
30
—
ns
Rise time
tr
—
29
—
ns
Turn-off delay time
td(off)
—
77
—
ns
Fall time
tf
—
19
—
ns
ID = 7.5 A
VGS = 10 V
RL = 26.7
Ω
Rg = 10
Ω
Total gate charge
Qg
—
29
—
nC
Gate to source charge
Qgs
—
5.5
—
nC
Gate to drain charge
Qgd
—
13
—
nC
VDD = 320 V
VGS = 10 V
ID = 15 A
Body-drain diode forward voltage
VDF
—
0.91
1.55
V
IF = 15 A, VGS = 0
Note4
Body-drain diode reverse recovery time
trr
—
260
—
ns
IF = 15 A, VGS = 0
diF/dt = 100 A/
µs
Notes: 4. Pulse test



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