24/07/2007 V3.0

2

NPW-TSD-ADE-1

• NPW-TSD-AD

• NPW-TSD-AE

InGaN

120

14000.0 - 22400.0

14000.0 - 18000.0

18000.0 - 22400.0

InGaN White High Lumens : 350 mA

Semiconductors

Innovating Illumination

Part Ordering

Number

Chip Technology

/ Color

Viewing

Angle˚

Luminous Intensity @

IF = 350mA (mcd)

NOTE

1. Luminous intensity is measured with an accuracy of ± 11%.

2. Wavelength binning is carried for all units as per the wavelength-binning table. Only one wavelength group is allowed for each reel.

Typ. (V)

Vf @ If = 350mA

Forward voltages are measure using a current pulse of 1 ms and with an accuracy of ± 0.1V.

Electrical Characteristics at Ta=25˚C

Max. (V)

Part Number

NPW-TSD

3.6

4.0

Material

Material

Lead-frame

Package

Encapsulant

Soldering Leads

Cu Alloy With Ag Plating

High Temperature Resistant Plastic, PPA

Silicone Resin

Sn-Sn Plating