SEMICONDUCTOR

RoHS

RoHS

Nell High Power Products

Note:

1.Repetitive rating: pulse width limited by junction temperature.

UNIT

Min.

100

2.9

62.5

2.35

THERMAL RESISTANCE

TO-251/ TO-252

TO-220AB

TO-251/TO-252

TO-220F

PARAMETER

Thermal resistance, junction to ambient

Thermal resistance, junction to case

SYMBOL

Rth(j-c)

Rth(j-a)

Typ.

Max.

ºC/W

2

.I

= 2A, V

= 50V, L = 64mH, R

= 25Ω, starting T =25°C.

AS

DD

GS

J

www.nellsemi.com

Page 2 of 8

3

.I

≤ 2.4A, di/dt ≤ 200A/µs, V

≤ V

, starting T =25°C.

SD

DD

(BR)DSS

J

2N60 Series

62.5

TO-220AB

5.5

TO-220F

UNIT

V /ns

V

W

A

mJ

ºC

-55 to 150

VALUE

2

1.24

600

±30

140

8

600

44

54

4.5

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)

C

T =25°C to 150°C

J

TEST CONDITIONS

R

=20KΩ

GS

T =25°C

C

T =100°C

C

Operation junction temperature

Single pulse avalanche energy (Note

2)

Storage temperature

Peak diode recovery dv/dt(Note 3)

PARAMETER

Pulsed Drain current(Note 1)

Continous Drain Current

Total power dissipation

Gate to Source voltage

Drain to Gate voltage

Drain to Source voltage

SYMBOL

VDGR

VDSS

dv/dt

VGS

IDM

EAS

TSTG

PD

ID

TJ

TL

.

.

lbf in (N m)

300

Maximum soldering temperature, for 10 seconds

Mounting torque, #6-32 or M3 screw

-55 to 150

TO-251/ TO-252

TO-220AB

10 (1.1)

1.6mm from case

IAR

Avalanche current(Note

1)

2

I

=2A, L = 64mH

AS

T =25°C

C

4.5

Repetitive avalanche energy(Note

1)

EAR

I

=2A, R

=50Ω, V

=10V

AR

GS

GS

TO-220F

23