TLP114A

2

2019-05-27

© 2019

Toshiba Electronic Devices & Storage Corporation

Absolute Maximum Ratings (Ta = 25°C)

Characteristic

Symbol

Rating

Unit

Forward current

IF

20

mA

Forward current derating

(Ta

≥ 70 °C)

ΔIF/°C

-0.36

mA/°C

Pulse forward current

(Note 1)

IFP

40

mA

Peak transient forward current

(Note 2)

IFPT

1

A

Reverse voltage

VR

5

V

Input power dissipation

PD

45

mW

Input power dissipation derating

(Ta ≥ 70 °C)

△PD/°C -0.82 mW/°C

Output current

IO

8

mA

Output current derating

(Ta

≥ 70 °C)

ΔIO/°C

-0.3

mA/°C

Peak output current

IOP

16

mA

Supply voltage

VCC

−0.5 to 30

V

Output voltage

VO

−0.5 to 20

V

Output power dissipation

PO

100

mW

Output power dissipation derating

(Ta

≥ 70 °C)

Po/°C

-1.8

mW/°C

Operating temperature range

Topr

−55 to 100

°C

Storage temperature range

Tstg

−55 to 125

°C

Lead solder temperature(10 s)

Tsol

260

°C

Isolation Voltage

(AC,60 s., R.H.

≤ 60°%)

(Note 3)

BVS

3750

Vrms

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

(Note 1):

50 % duty cycle, 1 ms pulse width. Derate 0.72mA / °C above 70 °C.

(Note 2):

Pulse width

≤ 1 μs, 300 pps.

(Note 3):

Device considered a two

−terminal device: Pins 1 and 3 shorted together, and pins 4,

5 and 6 shorted together.