GI1002 datasheet(2/5 Pages) VISHAY

2 / 5 page

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Document Number 86073

Rev. 2, 28-Jan-03

VISHAY

GI1001 to GI1004

Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

1) Pulse test: 300

µs pulse width, 1 % duty cycle

Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Parameter

Symbol

Value

Unit

Typical thermal resistance 1), 2) -

junction to ambient

RθJA

K/W

Typical thermal resistance 1), 2) -

junction to lead

RθJL

K/W

Parameter

Test condition

Symbol

Typ.

Max

Unit

Maximum instantaneous forward

voltage 1)

IF = 1.0 A

0.975

Maximum reverse current

VR/> = VRRM, Tamb = 25 °C

2.0

µA

VR/> = VRRM, Tamb = 100 °C

µA

Maximum reverse recovery time

IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A

trr

Typical junction capacitance

VR = 4 V, f = 1 MHz

Figure 1. Forward Current Derating Curve

Lead Temperature (

°C)

100

125

150

175

0.5

1.0

1.5

Resistive or

Inductive Load

0.8 x 0.8 x 0.4" Thick Copper Heatsink

(20 x 20 x 10mm)

0.375" (9.5mm)

ggi1001_01

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

Number of Cycles at 60 HZ

100

5.0

8.3ms Single Half Sine-Wave

(JEDEC Method) at TL =75

°C

ggi1001_02

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