DATA SHEET

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© Semiconductor Components Industries, LLC, 1997

October, 2023 − Rev. 2

1

Publication Order Number:

BCV26/D

PNP Darlington Transistor

BCV26

Description

This device is designed for applications requiring extremely high

current gain at collector currents to 800 mA. Sourced from Process 61.

ABSOLUTE MAXIMUM RATINGS

(TA = 25°C unless otherwise noted.) (Notes 1, 2, 3)

Symbol

Parameter

Value

Unit

VCEO

Collector−Emitter Voltage

30

V

VCBO

Collector−Base Voltage

40

V

VEBO

Emitter−Base Voltage

10

V

IC

Collector Current − Continuous

1.2

A

TJ, TSTG

Operating and Storage Junction

Temperature Range

−55 to +150

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. These ratings are based on a maximum junction temperature of 150°C.

2. These are steady−state limits. onsemi should be consulted on applications

involving pulsed or low−duty−cycle operations.

3. All voltages (V) and currents (A) are negative polarity for PNP transistors.

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise noted.) (Note 4)

Symbol

Parameter

Max

Unit

PD

Total Device Dissipation

350

mW

Derate Above 25°C

2.8

mW/_C

RθJA

Thermal Resistance,

Junction−to−Ambient

357

_C/W

4. Device mounted on FR−4 PCB 40 mm x 40 mm x 1.5 mm.

SOT−23

CASE 318

MARKING DIAGRAM

Device

Package

Shipping

ORDERING INFORMATION

BCV26

SOT−23

(Pb−Free,

Halide Free)

3,000 /

Tape & Reel

1. Base

2. Emitter

3. Collector

1

FDM G

G

FD = Specific Device Code

M

= Date Code

G

= Pb−Free Package

2

3

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)