BSP52T1G, BSP52T3G, SBSP52T1G

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2

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(IC = 100 mA, IE = 0)

V(BR)CBO

90

−

−

V

Emitter-Base Breakdown Voltage

(IE = 10 mA, IC = 0)

V(BR)EBO

5.0

−

−

V

Collector-Emitter Cutoff Current

(VCE = 80 V, VBE = 0)

ICES

−

−

10

mA

Emitter-Base Cutoff Current

(VEB = 4.0 V, IC = 0)

IEBO

−

−

10

mA

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 150 mA, VCE = 10 V)

(IC = 500 mA, VCE = 10 V)

hFE

1000

2000

−

−

−

−

−

Collector-Emitter Saturation Voltage

(IC = 500 mA, IB = 0.5 mA)

VCE(sat)

−

−

1.3

V

Base-Emitter Saturation Voltage

(IC = 500 mA, IB = 0.5 mA)

VBE(sat)

−

−

1.9

V

SWITCHING CHARACTERISTICS

Rise Time

(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)

tr

−

155

−

ns

Delay Time

(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA)

td

−

205

−

ns

Storage Time

(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)

ts

−

420

−

ns

Fall Time

(VCC = 10 V, IC = 150 mA, IB1 = 0.15 mA, IB2 = 0.15 mA)

tf

−

365

−

ns

3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%