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2SA2181 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SA2181
Description  PNP Epitaxial Planar Silicon Transistor 50V / 15A High-Speed Switching
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SA2181 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SA2181
No.8527-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--7.5A, IB=--375mA
--250
--500
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--7.5A, IB=--375mA
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--100µA, IE=0A
--50
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--100µA, IC=0A
--6
V
Turn-ON Time
ton
See specified Test Circuit.
80
ns
Storage Time
tstg
See specified Test Circuit.
300
ns
Fall Time
tf
See specified Test Circuit.
45
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7508-002
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
IT09987
0
--2.0
--0.5
--1.0
--1.5
0
--1
--7
--6
--5
--4
--3
--2
--8
--9
--10
--11
--12
--13
--14
--15
IB=0mA
--50mA
--20mA
--100mA
--200mA
--250mA
--150mA
--300mA
--350mA
--400mA
--450mA
IT09988
0
--1.0
--0.2
--0.4
--0.6
--0.8
0
--1
--2
--3
--4
--5
--6
--7
--8
IB=0mA
--40mA
--20mA
--10mA
--60mA
--80mA
--100mA
--120mA
--140mA
--160mA
VR
RL
VCC= --25V
VBE=5V
IC=20IB1= --20IB2= --7A
+
+
50
Ω
INPUT
OUTPUT
RB
100
µF
470
µF
PW=20
µs
IB1
IB2
D.C.
≤1%
10.0
3.2
4.5
2.8
1.6
1.2
0.7
0.75
2.55
2.55
12
3
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-220ML



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