2SC6080

No. A0277-1/4

Applications

•

High-speed switching applications (switching regulator, driver circuit).

Features

•

Adoption of MBIT process.

•

Large current capacitance.

•

Low collector-to-emitter saturation voltage.

•

High-speed switching.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

60

V

Collector-to-Emitter Voltage

VCES

60

V

Collector-to-Emitter Voltage

VCEO

50

V

Emitter-to-Base Voltage

VEBO

6V

Collector Current

IC

13

A

Collector Current (Pulse)

ICP

PW

≤10µs, duty cycle≤10%

15

A

Base Current

IB

2A

Collector Dissipation

PC

2W

Tc=25

°C25

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=40V, IE=0A

10

µA

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

10

µA

DC Current Gain

hFE1VCE=2V, IC=270mA

200

560

hFE2VCE=2V, IC=8.1A

50

Continued on next page.

Ordering number : ENA0277

72606 / 31506FA MS IM TB-00002091

2SC6080

NPN Epitaxial Planar Silicon Transistor

50V / 13A High-Speed Switching

Applications

SANYO Semiconductors

DATA SHEET

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Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.