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2SC6096 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC6096
Description  NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC6096 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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2SC6096
No. A0434-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Gain-Bandwidth Product
fT
VCE=10V, IC=300mA
300
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
13
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=1A, IB=100mA
100
150
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1A, IB=100mA
0.85
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10µA, IE=0A
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=100µA, RBE=0Ω
120
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10µA, IC=0A
6.5
V
Turn-ON Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
See specified Test Circuit.
1100
ns
Fall Time
tf
See specified Test Circuit.
40
ns
Package Dimensions
Switching Time Test Circuit
unit : mm
7007A-004
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
1.5
0.5
0.4
3.0
4.5
1.6
0.4
12
3
1.5
0.75
Top View
Bottom View
VR10
RB
VCC=50V
10IB1= --10IB2=IC=0.5A
VBE= --5V
+
+
50
Ω
INPUT
OUTPUT
RL
100
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
2.0
1.6
1.2
0.8
0.4
0.2
1.8
1.4
1.0
0.6
0
2.0
1.6
1.2
0.4
0.2
0.8
1.8
1.4
0.6
1.0
0
0.2
0.1
0
0.4
0.6
0.8
0.3
0.5
0.7
0.9
1.0
IT11115
10mA
20mA
40mA
80mA
IB=0mA
5mA
2mA
VCE=5V
0
0.2
0.4
0.6
0.8
1.2
1.0
IT11116
60mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
IC -- VBE
Base-to-Emitter Voltage, VBE -- V



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