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CPH3148 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # CPH3148
Description  PNP Epitaxial Planar Silicon Transistor High-Voltage Switching Applications
PDF  4 Pages
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Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

CPH3148 Datasheet(HTML) 2 Page - Sanyo Semicon Device

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CPH3148
No. A0436-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=--1A, IB=--100mA
--120
--240
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=--1A, IB=--100mA
--0.85
--1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=--10µA, IE=0A
--100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=--100µA, RBE=0Ω
--100
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=--1mA, RBE=∞
--100
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=--10µA, IC=0A
--7
V
Turn-ON Time
ton
See specified Test Circuit.
40
ns
Storage Time
tstg
See specified Test Circuit.
600
ns
Fall Time
tf
See specified Test Circuit.
30
ns
Package Dimensions
Switching Time Test Circuit
unit : mm (typ)
7015A-003
1 : Base
2 : Emitter
3 : Collector
SANYO : CPH3
2.9
0.05
0.4
0.15
2
1
3
0.95
VR
RB
VCC= --50V
VBE=5V
++
50
Ω
INPUT
OUTPUT
RL
220
µF
470
µF
PW=20
µs
IB1
D.C.
≤1%
IB2
IC= --10IB1=10IB2= --0.5A
IC -- VBE
IC -- VCE
Base-to-Emitter Voltage, VBE -- V
Collector-to-Emitter Voltage, VCE -- V
0
--0.4
--1.2
--2.0
--1.6
--0.8
--0.2
--0.6
--1.4
--1.8
--1.0
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
IT11134
0
0
--0.8
--1.2
--1.6
--2.0
--0.2
--0.4
--0.5
IT11133
--0.4
--0.1
--0.3
IB=0mA
--20mA
--60mA
--40mA
--5mA
VCE= --5V
--80mA
--100mA
--120mA
--140mA
--160mA



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