2SC6084

No. A0630-1/4

Features

•

High speed.

•

High breakdown voltage (VCBO=1500V).

•

High reliability (Adoption of HVP process).

•

Adoption of MBIT process.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1500

V

Collector-to-Emitter Voltage

VCEO

800

V

Emitter-to-Base Voltage

VEBO

5V

Collector Current

IC

5A

Collector Current (Pulse)

ICP

12

A

Collector Dissipation

PC

1.75

W

Tc=25°C50

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Electrical Characteristics at Ta=25°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=800V, IE=0A

10

µA

Collector Cutoff Current

ICES

VCE=1500V, RBE=0Ω

1.0

mA

Collector Sustain Voltage

VCEO(sus)

IC=100mA, IB=0A

800

V

Emitter Cutoff Current

IEBO

VEB=4V, IC=0A

1.0

mA

Collector-to-Emitter Saturation Voltage

VCE(sat)

IC=2.7A, IB=0.54A

3

V

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=2.7A, IB=0.54A

1.5

V

DC Current Gain

hFE1VCE=5V, IC=0.5A

10

hFE2VCE=5V, IC=3A

5

7

Fall Time

tf

IC=1.8A, IB1=0.36A, IB2=--0.72A

0.2

µs

Ordering number : ENA0630

D1306KC TI IM TB-00002398

SANYO Semiconductors

DATA SHEET

2SC6084

NPN Triple Diffused Planar Silicon Transistor

Switching Regulator Applications

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Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.