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BUF550 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # BUF550
Description  isc Silicon NPN Power Transistors
PDF  3 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUF550 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Silicon NPN Power Transistors
BUF550
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 10V(Min.)
·
Noise figure (NF Typ) = 1.8 dB
·
9 GHz fT silicon technology
APPLICATIONS
·
Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
20
V
VCEO
Collector-Emitter Voltage
10
V
VEBO
Emitter-Base Voltage
2.5
V
IC
Collector Current-Continuous
0.12
A
ICM
Collector Current-Peak
0.48
A
PC
Collector Power Dissipation
@ TC=25℃
0.2
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃


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