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DSA90C200HB Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DSA90C200HB Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Schottky Diode DSA90C200HB www.iscsemi.com 1 FEATURES · Low Loss and Soft Recovery · Low Leakage Current APPLICATIONS · Low Voltage High Frequency Switching Power Supply · Low Voltage High Frequency Invers Circuit · Low Voltage Continued Circuit and Protection Circuit ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current 2*45 A IFSM Peak Forward Surge Current(Rated Load 8.3 Half Mssine Wave-According to JEDEC Method) 400 A TJ Junction Temperature -40-175 ℃ Tstg Storage Temperature Range -40~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case per Leg 0.5 ℃ /W ELECTRICAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS MAX UNIT VF Maximum Instantaneous Forward Voltage IF= 4 5 A ,Tj = 25 ℃ 0.96 V IF= 45A ,Tj = 125℃ 0.86 IR Maximum Instantaneous Reverse Current VR= 200V,Tj = 25 ℃ 0.01 mA VR= 200V,Tj = 125 ℃ 5.00 |
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