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PIMXRT802VCFP4A Datasheet(PDF) 35 Page - NXP Semiconductors

Part # PIMXRT802VCFP4A
Description  i.MX RT1060 Crossover Processors for Consumer Products
PDF  119 Pages
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Manufacturer  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

PIMXRT802VCFP4A Datasheet(HTML) 35 Page - NXP Semiconductors

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Electrical Characteristics
i.MX RT1060 Crossover Processors for Consumer Products, Rev. 4, 04/2024
NXP Semiconductors
35
power from VDD_HIGH_IN when that supply is available and transitions to the backup battery when
VDD_HIGH_IN is lost.
In addition, if the clock monitor determines that the OSC32K is not present, then the source of the 32 K
will automatically switch to a crude internal ring oscillator. The frequency range of this block is
approximately 10–45 kHz. It highly depends on the process, voltage, and temperature.
The OSC32k runs from VDD_SNVS_CAP supply, which comes from the
VDD_HIGH_IN/VDD_SNVS_IN. The target battery is a ~3 V coin cell. Proper choice of coin cell type
is necessary for chosen VDD_HIGH_IN range. Appropriate series resistor (Rs) must be used when
connecting the coin cell. Rs depends on the charge current limit that depends on the chosen coin cell. For
example, for Panasonic ML621:
• Average Discharge Voltage is 2.5 V
• Maximum Charge Current is 0.6 mA
For a charge voltage of 3.2 V, Rs = (3.2-2.5)/0.6 m = 1.17 k.
4.3
I/O parameters
This section provide parameters on I/O interfaces.
4.3.1
I/O DC parameters
This section includes the DC parameters of the following I/O types:
Table 20. OSC32K main characteristics
Min
Typ
Max
Comments
Fosc
—
32.768 kHz
—
This frequency is nominal and determined mainly by the crystal selected.
32.0 K would work as well.
Current consumption
—
4 A
—
The 4 A is the consumption of the oscillator alone (OSC32k). Total supply
consumption will depend on what the digital portion of the RTC consumes.
The ring oscillator consumes 1 A when ring oscillator is inactive, 20 A
when the ring oscillator is running. Another 1.5 A is drawn from vdd_rtc in
the power_detect block. So, the total current is 6.5 A on vdd_rtc when the
ring oscillator is not running.
Bias resistor
—
14 M
—
This integrated bias resistor sets the amplifier into a high gain state. Any
leakage through the ESD network, external board leakage, or even a
scope probe that is significant relative to this value will debias the amp. The
debiasing will result in low gain, and will impact the circuit's ability to start
up and maintain oscillations.
Crystal Properties
Cload
—
10 pF
—
Usually crystals can be purchased tuned for different Cloads. This Cload
value is typically 1/2 of the capacitances realized on the PCB on either side
of the quartz. A higher Cload will decrease oscillation margin, but
increases current oscillating through the crystal.
ESR
—
50 k
100 k Equivalent series resistance of the crystal. Choosing a crystal with a higher
value will decrease the oscillating margin.



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