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NCEP1260F Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCEP1260F Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Co., Ltd Page V1.0 1 NCEP1260F Pb Free Product http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The NCEP1260F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =120V,ID =60A RDS(ON) =10mΩ(typical) @ VGS=10V ● Excellent gate charge x RDS(on) product(FOM) ● Very low on-resistance RDS(on) ● 175 °C operating temperature ● Pb-free lead plating ● 100% UIS tested Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! Schematic diagram Marking and pin assignment TO-220F top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity NCEP1260F NCEP1260F TO-220F - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 120 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID 60 A Drain Current-Continuous(TC=100 ) ℃ ID (100℃) 42.4 A Pulsed Drain Current IDM 240 A Maximum Power Dissipation PD 30 W Derating factor 0.2 W/℃ Single pulse avalanche energy (Note 5) EAS 290 mJ Operating Junction and Storage Temperature Range TJ,TSTG -55 To 175 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) RθJC 5 /W ℃ |
Similar Part No. - NCEP1260F |
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