Characteristic

Test Conditions

Min.

Typ.

Max. Unit

Prelim. 4/94

1

3

2

3.55 (0.140)

3.81 (0.150)

0.40 (0.016)

0.79 (0.031)

2.21 (0.087)

2.59 (0.102)

1.01 (0.040)

1.40 (0.055)

15.49 (0.610)

16.26 (0.640)

4.69 (0.185)

5.31 (0.209)

1.49 (0.059)

2.49 (0.098)

1.65 (0.065)

2.13 (0.084)

5.25 (0.215)

BSC

2.87 (0.113)

3.12 (0.123)

TO247–AD Package Outline.

Dimensions in mm (inches)

Drain – Source Voltage

Continuous Drain Current

Gate – Source Voltage

Operating and Storage Junction Temperature Range

Lead Temperature : 0.063” from Case for 10 Sec.

N–CHANNEL

ENHANCEMENT MODE

HIGH VOLTAGE

POWER MOSFETS

800

5.5

22

±30

180

–55 to 150

300

V

A

A

V

W

°C

Drain – Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate – Source Leakage Current

Gate Threshold Voltage

800

250

1000

±100

24

5.5

2.50

V

µA

nA

V

A

Ω

1) Repetitive Rating: Pulse Width limited by maximum junction temperature.

2) Pulse Test: Pulse Width < 380

µS , Duty Cycle < 2%

BFC46

LAB

SEME

800V

5.5A

2.50

Ω

Ω

4TH GENERATION MOSFET

Terminal 1

Gate

Terminal 2

Drain

Terminal 3

Source