NTD12 datasheet(1/2 Pages) EDI

Part #	NTD12

Description	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

PDF	2 Pages

Scroll/Zoom	100%

Manufacturer	EDI [Electronic devices inc.]

Direct Link	http://www.edidiodes.com

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1 / 2 page

NTD

100

Storage Temperature Range, TSTG

A

1

Max. DC Reverse Current @ PRV and 100

oC, I

R

-55

to +150

oC

ELECTRICAL CHARACTERISTICS(at TA =25 C Unless Otherwise Specified)

HIGH VOLTAGE-HIGH CURRENT

SILICON RECTIFIERS

-55

to +125

oC

A

Amps

Ambient Operating Temperature Range,TA

20

Max.One-Half Cycle Surge Current, IFM (Surge )@ 60Hz

Max. DC Reverse Current @ PRV and 25

oC, I

R

DIFFUSED SILICON JUNCTIONS

PRV 8,000 TO 60,000 VOLTS

AVALANCHE CHARACTERISTICS

LOW LEAKAGE

EDI Type No.

Peak

Reverse V oltage

PRV (V olts)

Avg. Fwd.Current

at 50

o C

(mA)

Max. Fwd. Voltage

Drop at 25

oC And I O

V F(Volts)

Length L

Fig.3

NTD 08

8,000

300

12

1.00

NTD 10

10,000

300

15

1.25

NTD 12

12,000

300

18

1.50

NTD 15

15,000

300

24

2.00

NTD 20

20,000

300

30

2.50

NTD 25

25,000

300

38

3.00

NTD 30

30,000

300

45

3.75

NTD 35

35,000

300

54

4.00

NTD 40

40,000

300

60

5.00

NTD 45

45,000

300

70

6.25

NTD 50

50,000

300

76

6.25

NTD 60

60,000

300

83

8.00

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