EC2C03C

No.8237-1/3

Applications

•

0.8 to 1.9GHz band VCO applications.

Features

•

Low series resistance. rs=0.55

Ω typ.

•

Ultraminiature (1008size) and (0.6mm) leadless package.

Specifications

Absolute Maximum Ratings at Ta=25

°C

Parameter

Symbol

Conditions

Ratings

Unit

Reverse Voltage

VR

15

V

Junction Temperature

Tj

125

°C

Storage Temperature

Tstg

--55 to +125

°C

Electrical Characteristics at Ta=25

°C

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Breakdown Voltage

V(BR)R

IR=10µA15

V

Reverse Current

IR

VR=10V

200

nA

Interterminal Capacitance

C1.0V

VR=1.0V, f=1MHz *

6.5

8.2

pF

C3.0V

VR=3.0V, f=1MHz

4.0

5.2

pF

Capacitance Ratio

CR

C1.0V / C3.0V

1.6

Series Resistance

rs

VR=1.0V, f=470MHz

0.55

0.75

Ω

Marking : VA

* 1MHz signal : 20mVrms

.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN8237

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft's

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

31505VC TS IM TB-00001150

EC2C03C

Diffused Junction Type Silicon Diode

Variable Capacitance Diode for

UHF Band VCO