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FTD8002 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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FTD8002 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() FTD8002 No.7752-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Input Capacitance Ciss VDS=10V, f=1MHz 2610 pF Output Capacitance Coss VDS=10V, f=1MHz 310 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 300 pF Turn-ON Delay Time td(on) See specified Test Circuit. 30 ns Rise Time tr See specified Test Circuit. 195 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 220 ns Fall Time tf See specified Test Circuit. 185 ns Total Gate Charge Qg VDS=10V, VGS=4V, ID=8A 26 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4V, ID=8A 3.5 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=8A 8.0 nC Diode Forward Voltage VSD IS=8A, VGS=0 0.82 1.2 V Package Dimensions unit : mm 2231 Switching Time Test Circuit Electrical Connection 3.0 0.425 0.65 0.125 85 14 0.25 1 : Drain 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain SANYO : TSSOP8 PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=8A RL=1.88Ω VDD=15V VOUT FTD8002 VIN 4V 0V VIN DS2 S2 G2 DS1 S1 G1 |
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